PART |
Description |
Maker |
M67776L |
RF POWER MODULE 806-870MHz, 7.2V, 5.0W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
RA03M8087M10 |
806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
D8740270GT |
GaAs Power Doubler, 40 - 870MHz, 27.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
D8740240GT |
GaAs Power Doubler, 40 - 870MHz, 24.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
http:// PDI[PREMIER DEVICES, INC.]
|
D8740250GT |
GaAs Power Doubler, 40 - 870MHz, 25.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
D8740150GTH |
GaAs Power Doubler, 40 - 870MHz, 15.5dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
D8740250GTH |
GaAs Power Doubler, 40 - 870MHz, 25.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
http:// PREMIER DEVICES, INC.
|
S8740340 |
GaAs Push Pull, 40 - 870MHz, 34.5dB min. Gain @ 870MHz, 280mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
RA45H7687M1-101 |
RF MOSFET MODULE 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
MHW803 |
2 W / 806 to 905 MHz UHF POWER AMPLIFIERS 2 W, 806 to 905 MHz UHF POWER AMPLIFIERS
|
Motorola, Inc
|
RD07MUS2B RD07MUS2B10 |
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W
|
Mitsubishi Electric Semiconductor
|
MPS-080817N-85 |
806 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MicroWave Technology, Inc.
|
|